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Calculadora de Diodo TVS para ESD

Calcula la tensión de ruptura, tensión de clamp, corriente pico y potencia del diodo TVS para protección ESD.

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Fórmula

Ipp=VESDRHBM,Ppk=Vclamp×IppI_{pp} = \frac{V_{ESD}}{R_{HBM}},\quad P_{pk} = V_{clamp} \times I_{pp}

Referencia: JEDEC JESD22-A114 HBM / IEC 61000-4-2

VwmWorking voltage (V)
VBRBreakdown voltage (V)
VclampClamp voltage (V)
R_HBMHBM discharge resistance 1500Ω (Ω)

Cómo Funciona

Electrostatic Discharge (ESD) protection using Transient Voltage Suppressor (TVS) diodes is critical in electronic circuit design. These specialized diodes provide robust protection against high-voltage, short-duration electrostatic events that can damage sensitive semiconductor components. The key design parameters include breakdown voltage (VBR), clamping voltage (Vc), and peak current handling capabilities.

Ejemplo Resuelto

Problem: Select a TVS diode to protect a 3.3V microcontroller input from ESD events with 2kV Human Body Model (HBM) stress Solution: 1. Calculate VBR: VBR = 3.3V × 1.1 = 3.63V 2. Calculate Vc: Vc = 3.63V × 1.3 = 4.72V 3. Calculate HBM Peak Current: Ipeak = 2000V/1500Ω = 1.33A 4. Calculate Peak Power: Ppk = 4.72V × 1.33A = 6.28W 5. Select TVS diode with Vc < 3.3V and Ipeak > 1.33A

Consejos Prácticos

  • Always choose TVS diode with lower clamping voltage than protected device rating
  • Consider circuit board layout to minimize ESD event energy
  • Use multiple TVS diodes for comprehensive protection in complex circuits

Errores Comunes

  • Selecting a TVS diode with clamping voltage higher than device input voltage
  • Ignoring peak current requirements
  • Not considering capacitance impact on high-speed circuits

Preguntas Frecuentes

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