Calculadora de Punto de Operación MOSFET
Calcula el punto de operación de MOSFETs en canal N y canal P en regiones de saturación y lineal.
Fórmula
I_D = k_n/2 × (V_GS−V_th)² (sat), I_D = k_n × [(V_GS−V_th)V_DS − V_DS²/2] (triode)
Cómo Funciona
A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) operating point represents the DC bias conditions that establish the transistor's fundamental operating state. In this context, the key parameters include drain-source voltage (VDS), gate-source voltage (VGS), and drain current (ID), which determine whether the device is in cutoff, linear, or saturation regions. Understanding the operating point is crucial for ensuring the transistor operates within its designed performance envelope and maintains signal integrity.
Ejemplo Resuelto
Consider an n-channel MOSFET with the following parameters: Threshold voltage (Vth) = 2V, Transconductance parameter (K) = 0.5 mA/V², Supply voltage (VDD) = 5V. Step 1: Determine VGS = 3.5V. Step 2: Calculate VDS = 4V. Step 3: Use the equation ID = K(VGS - Vth)² for saturation region. Plugging in values: ID = 0.5 * (3.5 - 2)² = 1.125 mA. The resulting operating point confirms the transistor is in the saturation region.
Consejos Prácticos
- ✓Always verify the transistor's region of operation before detailed calculations
- ✓Use manufacturer datasheets to confirm precise parameter values
- ✓Consider temperature effects on transistor characteristics
- ✓Check for potential self-heating in high-power applications
Errores Comunes
- ✗Misinterpreting transistor regions of operation
- ✗Neglecting temperature coefficient variations
- ✗Using generic parameters instead of specific device characteristics
- ✗Overlooking parasitic capacitance effects
Preguntas Frecuentes
What is the difference between linear and saturation regions?
In the linear region, drain current increases linearly with VDS. In the saturation region, drain current remains relatively constant despite VDS changes.
How does temperature affect MOSFET operating point?
Temperature increases can lower threshold voltage, increase leakage current, and modify transconductance parameters.
Can I use the same calculation method for p-channel MOSFETs?
The fundamental equations are similar, but you'll need to adjust for the opposite polarity of voltages and currents.
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