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Effective Dielectric Constant Calculator (Microstrip)

Calculate microstrip effective dielectric constant εeff with Hammerstad–Jensen, plus Getsinger dispersion, propagation velocity, delay in ps/mm and ps/inch, and guided wavelength.

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Formula

εeff=εr+12+εr12(1+10u)a(u)b(εr),u=weffh\varepsilon_{\text{eff}} = \frac{\varepsilon_r + 1}{2} + \frac{\varepsilon_r - 1}{2}\left(1 + \frac{10}{u}\right)^{-a(u)\,b(\varepsilon_r)},\qquad u = \frac{w_{\text{eff}}}{h}

Reference: E. Hammerstad & Ø. Jensen, "Accurate Models for Microstrip Computer-Aided Design", IEEE MTT-S 1980; W. J. Getsinger, "Microstrip Dispersion Model", IEEE Trans. MTT-21, 1973

εeffEffective dielectric constant seen by the wave
εrSubstrate relative permittivity
wTrace width (mm)
hDielectric height to the reference plane (mm)
tCopper thickness (widens the effective trace) (mm)
qFilling factor, (εeff−1)/(εr−1)
tpdPropagation delay, √εeff / c (ps/mm)

How It Works

A microstrip is a mixed-dielectric structure. The trace sits on the laminate with a reference plane below it, but above the trace is air. The field lines therefore split between two media of different permittivity, and the wave propagates as if it were travelling in a single uniform medium of some intermediate value εeff\varepsilon_{eff}, strictly bounded by 1<εeff<εr1 < \varepsilon_{eff} < \varepsilon_r. Every number that depends on velocity — propagation delay, guided wavelength, stub length, electrical length of a matching section — depends on εeff\varepsilon_{eff} and not on the laminate εr\varepsilon_r printed in the datasheet.

Hammerstad and Jensen fitted εeff\varepsilon_{eff} to the exact quasi-static field solution as a function of a single shape parameter u=w/hu = w/h, with an εr\varepsilon_r-dependent exponent. Their closed form holds to roughly 1 % over 0.05u200.05 \le u \le 20 and εr12\varepsilon_r \le 12, which covers essentially all printed-circuit work. Copper thickness enters first as an effective width increase Δw=(t/π)ln(1+2h/t)\Delta w = (t/\pi)\ln(1 + 2h/t), because a conductor with real thickness presents extra sidewall to the field; ignoring it overstates Z0Z_0 noticeably on heavy copper.

Two limits confirm the model is doing the right physics. As w/h0w/h \to 0 the trace barely disturbs the air-dielectric interface and εeff(εr+1)/2\varepsilon_{eff} \to (\varepsilon_r + 1)/2, the arithmetic mean of the two half-spaces. As w/hw/h \to \infty the field is squeezed entirely into the substrate and εeffεr\varepsilon_{eff} \to \varepsilon_r — the parallel-plate limit, where a microstrip behaves like a stripline. Between them the filling factor q=(εeff1)/(εr1)q = (\varepsilon_{eff} - 1)/(\varepsilon_r - 1) states directly what fraction of the field energy sits inside the laminate.

The quasi-static result is frequency-independent, which is not quite true. As frequency rises the field concentrates further into the higher-permittivity substrate and εeff\varepsilon_{eff} climbs monotonically toward εr\varepsilon_r. Getsinger's model captures this as εeff(f)=εr(εrεeff)/(1+G(f/fp)2)\varepsilon_{eff}(f) = \varepsilon_r - (\varepsilon_r - \varepsilon_{eff})/(1 + G(f/f_p)^2) with fp=Z0/(2μ0h)f_p = Z_0/(2\mu_0 h) and G=0.6+0.009Z0G = 0.6 + 0.009 Z_0. The correction scales as (fh)2(f h)^2, so it is under 1 % on thin laminate below about 10 GHz and becomes several percent on thick substrate or above roughly 15 GHz.

Worked Example

Given: w=0.3w = 0.3 mm, h=0.2h = 0.2 mm, εr=4.3\varepsilon_r = 4.3 (FR-4), t=35t = 35 µm (1 oz), f=1f = 1 GHz Step 1: Thickness correction to the effective width Δw=tπ(1+ln2ht)=0.035π(1+ln0.40.035)=0.011141×(1+2.43612)=0.03828\Delta w = \frac{t}{\pi}\left(1 + \ln\frac{2h}{t}\right) = \frac{0.035}{\pi}\left(1 + \ln\frac{0.4}{0.035}\right) = 0.011141 \times (1 + 2.43612) = 0.03828 mm weff=0.3+0.03828=0.33828w_{eff} = 0.3 + 0.03828 = 0.33828 mm, so u=weff/h=1.69141u = w_{eff}/h = 1.69141 Step 2: Hammerstad–Jensen shape terms a=1+149lnu4+(u/52)2u4+0.432+118.7ln(1+(u18.1)3)=0.998997a = 1 + \frac{1}{49}\ln\frac{u^4 + (u/52)^2}{u^4 + 0.432} + \frac{1}{18.7}\ln\left(1 + \left(\frac{u}{18.1}\right)^3\right) = 0.998997 b=0.564(εr0.9εr+3)0.053=0.564×(0.465753)0.053=0.541619b = 0.564\left(\frac{\varepsilon_r - 0.9}{\varepsilon_r + 3}\right)^{0.053} = 0.564 \times (0.465753)^{0.053} = 0.541619 Step 3: Effective dielectric constant εeff=εr+12+εr12(1+10u)ab\varepsilon_{eff} = \frac{\varepsilon_r + 1}{2} + \frac{\varepsilon_r - 1}{2}\left(1 + \frac{10}{u}\right)^{-ab} =2.65+1.65×(6.91224)0.541076=2.65+1.65×0.35131=3.2296814465543817= 2.65 + 1.65 \times (6.91224)^{-0.541076} = 2.65 + 1.65 \times 0.35131 = 3.2296814465543817

Sanity check against the bounds: (εr+1)/2=2.65(\varepsilon_r + 1)/2 = 2.65 and εr=4.3\varepsilon_r = 4.3. The result sits between them, as it must.

Step 4: Filling factor and impedance q=εeff1εr1=2.22968143.3=0.6756610444104187q = \frac{\varepsilon_{eff} - 1}{\varepsilon_r - 1} = \frac{2.2296814}{3.3} = 0.6756610444104187 Z0=54.36834333422282Z_0 = 54.36834333422282 Ω — about two thirds of the field energy is inside the laminate. Step 5: Propagation vp=cεeff=c1.79713=55.64423238564186 %v_p = \frac{c}{\sqrt{\varepsilon_{eff}}} = \frac{c}{1.79713} = 55.64423238564186\ \% of cc tpd=εeffc=1.797130.299792458 mm/ps=5.994585258834897t_{pd} = \frac{\sqrt{\varepsilon_{eff}}}{c} = \frac{1.79713}{0.299792458\ \text{mm/ps}} = 5.994585258834897 ps/mm

In imperial units: 5.994585×25.4=152.262465574406385.994585 \times 25.4 = 152.26246557440638 ps/inch — the familiar "about 150 ps per inch" for FR-4 microstrip.

Step 6: Dispersion and guided wavelength at 1 GHz fp=Z02μ0h=54.36832×4π×107×0.2×103=1.0817×1011f_p = \frac{Z_0}{2\mu_0 h} = \frac{54.3683}{2 \times 4\pi \times 10^{-7} \times 0.2 \times 10^{-3}} = 1.0817 \times 10^{11} Hz

At 1 GHz the ratio f/fpf/f_p is 0.00924, so the correction is negligible: εeff(f)=3.22978109571598\varepsilon_{eff}(f) = 3.22978109571598, a shift of only 0.0031 %.

λg=cfεeff(f)=166.81463855984217\lambda_g = \frac{c}{f\sqrt{\varepsilon_{eff}(f)}} = 166.81463855984217 mm, so a quarter-wave section is 41.7036596399605441.70365963996054 mm. Result: εeff=3.2297\varepsilon_{eff} = 3.2297, 55.6 % of the speed of light, 152.3 ps/inch, and a quarter wave of 41.7 mm at 1 GHz.

Practical Tips

  • Sanity-check any epsilon-eff result against the two bounds: it must lie between (epsilon-r + 1)/2 and epsilon-r. A value outside that range means a units or geometry error, not a marginal model
  • Use the filling factor for tolerance analysis — a change in laminate epsilon-r moves epsilon-eff by roughly q times that change, so a line with q = 0.68 passes about two thirds of any laminate variation into your delay budget
  • Quote delay in ps/inch when talking to signal-integrity engineers and ps/mm when doing layout arithmetic. Both are the same number scaled by 25.4, and mixing them is a common source of length-matching errors
  • Wider traces raise epsilon-eff, which means the delay of a controlled-impedance line is not constant across a board with mixed geometries. Length-match on delay, not on physical length, when the widths differ
  • For frequency-critical structures on thick substrate, run the calculation at your operating frequency rather than DC. The dispersion output tells you immediately whether it matters or can be ignored

Common Mistakes

  • Using the laminate epsilon-r instead of epsilon-eff for stub and wavelength calculations — on FR-4 that gives a quarter-wave stub about 13 percent too short, enough to move a filter edge by hundreds of MHz
  • Assuming microstrip and stripline have the same delay on the same laminate — a stripline is fully buried so its epsilon-eff equals epsilon-r exactly, making it roughly 15 percent slower than a microstrip on identical material
  • Ignoring copper thickness on heavy copper builds — 2 oz copper adds a substantial effective width, and leaving it out overstates Z0 by several percent
  • Applying the quasi-static value at mmWave frequencies — above roughly 15 GHz, or on thick substrate, epsilon-eff climbs measurably toward epsilon-r and the static number under-predicts delay
  • Forgetting soldermask — mask is roughly epsilon-r 3.5 and replaces air above the trace, raising epsilon-eff by 2 to 5 percent and lowering Z0 by a similar amount on a typical 50 ohm line

Frequently Asked Questions

Because a microstrip is only half-buried. Part of the field travels through the air above the trace where permittivity is 1, pulling the average down. A stripline is fully surrounded by dielectric so its epsilon-eff equals epsilon-r exactly, and it is correspondingly slower.
A 50 ohm microstrip on 4.3 epsilon-r FR-4 usually lands between 3.0 and 3.4 depending on the width-to-height ratio. Wider traces push more field into the substrate and raise epsilon-eff; narrow traces let more field into the air and lower it.
Physical length scales as 1 over the square root of epsilon-eff. At 2.4 GHz a free-space quarter wave is 31.2 mm; on FR-4 microstrip with epsilon-eff of 3.23 it shrinks to 17.38 mm. Using epsilon-r = 4.3 instead would give 15.06 mm, a 13.3 percent error.
The correction scales with the square of frequency times substrate height. On 0.2 mm substrate it is well under 1 percent up to 10 GHz and can be ignored. On 1.6 mm substrate, or above roughly 15 GHz on any stack-up, epsilon-eff can climb several percent toward epsilon-r and must be used for wavelength-critical structures.
q = (epsilon-eff minus 1) divided by (epsilon-r minus 1) states what fraction of the field energy is inside the substrate. It is convenient for sensitivity analysis: a laminate tolerance of plus or minus 0.2 in epsilon-r moves epsilon-eff by roughly q times 0.2, which propagates straight into your delay and impedance budget.
Yes. Soldermask is roughly epsilon-r 3.5 and replaces some of the air above the trace, raising epsilon-eff by about 2 to 5 percent and lowering Z0 by a similar amount on a typical 50 ohm line. This calculator models bare microstrip; for a masked line use the embedded-microstrip mode of the controlled impedance calculator.

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