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MOSFET Power Dissipation Calculator

POSThttps://rftools.io/api/py/v1/calculate

Slug mosfet-power-dissipation. Calculate MOSFET conduction loss, switching loss, total power dissipation, junction temperature, and efficiency for power electronics design

Inputs

Send every one of these in inputs, in the units shown. Most are required: a call without one is refused (400) and costs nothing; one the calculator can do without takes the default shown. An input outside its range is still computed and flagged in the provenance.

Inputs of mosfet-power-dissipation
NameUnitRangeDefaultDescription
drainCurrentnumberAat least 0.0015RMS drain current through the MOSFET
rdsonnumbermΩat least 0.110Drain-source on-resistance from datasheet
vdsnumberVat least 0.112Voltage across MOSFET during off state (bus voltage)
frequencynumberkHzat least 0.1100Switching frequency of the converter
riseTimenumbernsat least 0.120Current rise time during turn-on transition
fallTimenumbernsat least 0.120Current fall time during turn-off transition
rthJAnumber°C/W1 … 30040Junction-to-ambient thermal resistance. TO-220 no heatsink: ~60, with heatsink: ~10-20, SOT-23: ~150
tAmbientnumber°C−40 … 8525Operating ambient temperature
drainCurrentMinnumberAat least 00The lowest RMS drain current in service; 0 for the nominal.
drainCurrentMaxnumberAat least 00The highest RMS drain current in service; 0 for the nominal. The junction temperature is taken at the highest current and ambient.
tAmbientMinnumber°C−40 … 1500The coldest ambient in service, which may be below 0 °C; 0 for the nominal.
tAmbientMaxnumber°C−40 … 1500The hottest ambient in service; 0 for the nominal.
rdsonTempconumber%/°C0 … 20R_DS(on) rises as R_DS(on)·(1 + α·(T_j − 25 °C)), typically by 0.35 to 0.5 %/°C (M. Keagy, Electronic Design, 2002). With α above 0, R_DS(on) is the 25 °C value and the junction temperature is solved with it; 0 takes R_DS(on) as given at every temperature.
qgnumbernC0 … 1000020At the gate drive voltage: the driver delivers Q_g·V_g·f_sw, which it dissipates, so it is not in the junction temperature.
vGatenumberV1 … 2010Gate Drive Voltage
cossnumberpF0 … 1000000Its energy ½·C_oss·V_DS² is lost in the channel at each hard turn-on (IR AN-1070); give the datasheet's energy-related C_o(er) where it has one. 0 leaves it out.

Outputs

Returned in values, by key. A value that is unbounded or undefined is null.

Outputs of mosfet-power-dissipation
FieldUnitDescription
conductionLossmWConduction Loss
switchingLossmWSwitching Loss
totalLossheadlinemWTotal Power Loss
junctionTemp°CJunction Temperature
efficiency%MOSFET Efficiency (1 − P_loss/P_in)
junctionTempWorst°CAt the corner of the current and ambient ranges where it is highest
junctionTempWorstCurrentADrain Current at the Hottest Junction
junctionTempWorstAmbient°CAmbient at the Hottest Junction
junctionTempCoolest°CAt the lowest current and ambient: with the worst case, the junction's swing over the envelope
totalLossWorstmWTotal Power Loss, Worst Case
totalLossWorstCurrentADrain Current at the Worst Loss
efficiencyWorst%Efficiency with Gate Drive, Worst Case
efficiencyWorstCurrentADrain Current at the Worst Efficiency
drainCurrentWorstAThe MOSFET's continuous drain current rating must be at least this, at its operating temperature
vdsRatingVThe rating sold at or above 1.5 times the drain-source voltage
lossConductionWI_D²·R_DS(on) at the junction temperature
lossSwitchingW½·V_DS·I_D·(t_r + t_f)·f_sw
lossOutputCapW½·C_oss·V_DS²·f_sw, lost at each hard turn-on
lossGateDriveWQ_g·V_g·f_sw, dissipated in the gate driver
lossTotalWThe MOSFET's loss and its gate drive
outputPowerWV_DS·I_D, the power the MOSFET efficiency is taken against, less the losses
efficiencyLossModel%1 − (MOSFET loss + gate drive)/(V_DS·I_D), at the nominal current and ambient

Calling it

  • Calculate: one call, the request and response in full, and its errors.
  • Batch: this calculator with others, or a sweep, in one request.
  • Solve for a target: the value of one input that brings an output to a target.