Documentation sections
MOSFET Power Dissipation Calculator
POSThttps://rftools.io/ api/ py/ v1/ calculate
Slug mosfet-power-dissipation. Calculate MOSFET conduction loss, switching loss, total power dissipation, junction temperature, and efficiency for power electronics design
Inputs
Send every one of these in inputs, in the units shown. Most are required: a call without one is refused (400) and costs nothing; one the calculator can do without takes the default shown. An input outside its range is still computed and flagged in the provenance.
| Name | Unit | Range | Default | Description |
|---|---|---|---|---|
| drainCurrentnumber | A | at least 0.001 | 5 | RMS drain current through the MOSFET |
| rdsonnumber | mΩ | at least 0.1 | 10 | Drain-source on-resistance from datasheet |
| vdsnumber | V | at least 0.1 | 12 | Voltage across MOSFET during off state (bus voltage) |
| frequencynumber | kHz | at least 0.1 | 100 | Switching frequency of the converter |
| riseTimenumber | ns | at least 0.1 | 20 | Current rise time during turn-on transition |
| fallTimenumber | ns | at least 0.1 | 20 | Current fall time during turn-off transition |
| rthJAnumber | °C/W | 1 … 300 | 40 | Junction-to-ambient thermal resistance. TO-220 no heatsink: ~60, with heatsink: ~10-20, SOT-23: ~150 |
| tAmbientnumber | °C | −40 … 85 | 25 | Operating ambient temperature |
| drainCurrentMinnumber | A | at least 0 | 0 | The lowest RMS drain current in service; 0 for the nominal. |
| drainCurrentMaxnumber | A | at least 0 | 0 | The highest RMS drain current in service; 0 for the nominal. The junction temperature is taken at the highest current and ambient. |
| tAmbientMinnumber | °C | −40 … 150 | 0 | The coldest ambient in service, which may be below 0 °C; 0 for the nominal. |
| tAmbientMaxnumber | °C | −40 … 150 | 0 | The hottest ambient in service; 0 for the nominal. |
| rdsonTempconumber | %/°C | 0 … 2 | 0 | R_DS(on) rises as R_DS(on)·(1 + α·(T_j − 25 °C)), typically by 0.35 to 0.5 %/°C (M. Keagy, Electronic Design, 2002). With α above 0, R_DS(on) is the 25 °C value and the junction temperature is solved with it; 0 takes R_DS(on) as given at every temperature. |
| qgnumber | nC | 0 … 10000 | 20 | At the gate drive voltage: the driver delivers Q_g·V_g·f_sw, which it dissipates, so it is not in the junction temperature. |
| vGatenumber | V | 1 … 20 | 10 | Gate Drive Voltage |
| cossnumber | pF | 0 … 100000 | 0 | Its energy ½·C_oss·V_DS² is lost in the channel at each hard turn-on (IR AN-1070); give the datasheet's energy-related C_o(er) where it has one. 0 leaves it out. |
Outputs
Returned in values, by key. A value that is unbounded or undefined is null.
| Field | Unit | Description |
|---|---|---|
| conductionLoss | mW | Conduction Loss |
| switchingLoss | mW | Switching Loss |
| totalLossheadline | mW | Total Power Loss |
| junctionTemp | °C | Junction Temperature |
| efficiency | % | MOSFET Efficiency (1 − P_loss/P_in) |
| junctionTempWorst | °C | At the corner of the current and ambient ranges where it is highest |
| junctionTempWorstCurrent | A | Drain Current at the Hottest Junction |
| junctionTempWorstAmbient | °C | Ambient at the Hottest Junction |
| junctionTempCoolest | °C | At the lowest current and ambient: with the worst case, the junction's swing over the envelope |
| totalLossWorst | mW | Total Power Loss, Worst Case |
| totalLossWorstCurrent | A | Drain Current at the Worst Loss |
| efficiencyWorst | % | Efficiency with Gate Drive, Worst Case |
| efficiencyWorstCurrent | A | Drain Current at the Worst Efficiency |
| drainCurrentWorst | A | The MOSFET's continuous drain current rating must be at least this, at its operating temperature |
| vdsRating | V | The rating sold at or above 1.5 times the drain-source voltage |
| lossConduction | W | I_D²·R_DS(on) at the junction temperature |
| lossSwitching | W | ½·V_DS·I_D·(t_r + t_f)·f_sw |
| lossOutputCap | W | ½·C_oss·V_DS²·f_sw, lost at each hard turn-on |
| lossGateDrive | W | Q_g·V_g·f_sw, dissipated in the gate driver |
| lossTotal | W | The MOSFET's loss and its gate drive |
| outputPower | W | V_DS·I_D, the power the MOSFET efficiency is taken against, less the losses |
| efficiencyLossModel | % | 1 − (MOSFET loss + gate drive)/(V_DS·I_D), at the nominal current and ambient |
Calling it
- Calculate: one call, the request and response in full, and its errors.
- Batch: this calculator with others, or a sweep, in one request.
- Solve for a target: the value of one input that brings an output to a target.